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The WPGM1517050 is a Gallium Nitride (GaN) Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistor (RF MOSFET) manufactured by WAVEPIA Co., Ltd. This component is supplied as a bare die, designed for high-frequency operations within the 15 GHz to 17 GHz band. Key electrical specifications include a test voltage of 28 V and a test current of 720 mA. The device delivers an output power of 46.65 dBm with a gain of 19 dB, making it suitable for demanding RF signal amplification tasks.
Verify that the received component matches the specified bare die format and manufacturer part number. Confirm compatibility with your specific RF circuit design requirements, particularly regarding the 28 V operating voltage and 15-17 GHz frequency range. Ensure proper handling procedures are followed due to the sensitive nature of bare semiconductor dies.
Select this component when designing circuits requiring operation specifically within the 15 GHz to 17 GHz spectrum. Consider its GaN construction for potential efficiency benefits over traditional silicon devices. Evaluate the 46.65 dBm output power and 19 dB gain against your system's signal strength and amplification needs. Ensure your PCB layout supports bare die mounting techniques.
This RF MOSFET belongs to the category of high-frequency transistors used in modern communication infrastructure. It represents a specialized semiconductor solution for microwave bands, differing from lower-frequency logic or power switching devices. Its die form factor indicates integration into custom modules or multi-chip packages rather than standalone discrete usage.
No public confirmed substitute part numbers are available in the provided documentation. Engineers must verify pinout, electrical characteristics, and thermal properties carefully if considering alternative GaN RF dies from other manufacturers.
The device operates in the 15 GHz to 17 GHz frequency band.
No, it is supplied as a bare die.