XP233N05013R-G

Single FETs, MOSFETs Overview

The XP233N05013R-G is a single N-channel enhancement mode MOSFET manufactured by Torex Semiconductor. It features a SOT-323-3A surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 30V and a continuous drain current of 0.5A, with a peak pulse current rating of 1A. Key electrical parameters include a maximum on-resistance of 1.5Ω at VGS=4.5V and 4Ω at VGS=2.5V. The gate threshold voltage typically ranges from 0.9V to 1.7V. Operating characteristics include a junction temperature limit of 150°C, power dissipation of 0.35W, and total gate charge of 0.78nC.

Single FETs, MOSFETs Feature Summary

• Capable of low-voltage driving with a specified operating voltage of 2.5V.
• Constructed with environmentally friendly materials that are halogen and antimony free.
• Fully compliant with EU RoHS standards and lead-free manufacturing requirements.

Single FETs, MOSFETs Applications

• General electronic switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code on the SOT-323-3A package against the datasheet pattern. Confirm the suffix indicates compliance with environmental directives. Ensure the supplier provides traceability documentation for the specific lot number printed on the reel or tape.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact surface-mount integration with low gate drive requirements. The low threshold voltage facilitates operation with logic-level signals. Consider the thermal constraints and power dissipation limits when designing for high ambient temperatures or continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the XP233 series of N-channel MOSFETs from Torex Semiconductor. The series focuses on small-signal switching applications within a minimal footprint. The -G suffix specifically denotes the environmental compliance status regarding halogens, antimony, and lead content.

Single FETs, MOSFETs Replacement Considerations

Consult official Torex documentation for verified cross-reference data. No direct substitute part numbers are confirmed in the provided source material.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 1A, provided the pulse width is 10μs or less and the duty cycle does not exceed 1%.

How does the on-resistance vary with gate voltage?

The on-resistance is typically 1.5Ω at a gate-source voltage of 4.5V and increases to a typical value of 1.5Ω (max 4Ω) at a gate-source voltage of 2.5V.