XP3832CMT

$2.01

Description：MOSFET 2N-CH 30V 16A PMPAK
Series：-

SKU:4db93a951e8d Category: FET, MOSFET Arrays Brand: YAGEO XSEMI

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 16A PMPAK
Series：-
Mfr：YAGEO XSEMI
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs：5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1712pF @ 15V, 3920pF @ 15V
Power - Max：2.08W (Ta), 2.27W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerLDFN
Supplier Device Package：PMPAK® 5 x 6
Grade：-
Qualification：-

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XP3832CMT

Overview

The XP3832CMT is a dual N-channel enhancement mode MOSFET manufactured by YAGEO XSemi using silicon technology. It features an asymmetric configuration housed in a PMPAK-8 surface-mount package. The device supports a drain-source voltage of 30 V and delivers continuous drain currents of 27 A and 55 A for its respective channels. Key electrical parameters include a maximum on-resistance of 5 mOhms, a gate-source voltage limit of ±20 V, and a threshold voltage of 2.2 V. With a total gate charge of 19 nC and power dissipation of 2.27 W, it operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Asymmetric dual-channel architecture providing distinct current handling capabilities per channel.

Applications

Power management circuits requiring low on-resistance switching.

Procurement Notes

Verify the specific manufacturer part number against official YAGEO XSemi documentation to ensure component authenticity. Confirm that the PMPAK-8 package dimensions and pinout align with the target PCB footprint design. Review the datasheet for thermal resistance values to validate heat dissipation requirements for the intended operating environment.

Selection Notes

Select this component when an asymmetric dual N-channel configuration is required within a compact SMD form factor. Ensure the application voltage does not exceed the 30 V drain-source rating. Verify that the gate drive signals remain within the ±20 V absolute maximum ratings to prevent device damage during operation.

Part Context

This component belongs to the XP series of power MOSFETs from YAGEO XSemi. The series utilizes advanced silicon processing techniques to achieve low on-resistance and high efficiency. The XP3832CMT specifically addresses applications needing dual-channel control with asymmetric current specifications in a single package.