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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7.8A 8SO
- Series：XP3A020
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Ta)
- Rds On (Max) @ Id, Vgs：20mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：880pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The XP3A020M is a dual N-channel power MOSFET manufactured by YAGEO XSemi. It features a 30V drain-source voltage rating and supports a continuous drain current of 7.8A. The device incorporates a low on-resistance of 20 milliohms to minimize conduction losses. It utilizes an enhancement mode channel configuration within a compact SO-8 surface-mount package. The component operates reliably across a temperature range from -55°C to +150°C, with a maximum power dissipation of 2.5W.
Feature Summary
- Dual N-channel configuration for synchronized switching applications
- Low on-resistance design for efficient power management
- Enhancement mode operation compatible with standard logic levels
- Robust thermal performance suitable for high-density layouts
Applications
- DC-DC converter synchronous rectification
- Motor control bridge circuits
- Power distribution unit load switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status through official documentation before integration. Cross-reference the part number with authorized distributors to validate authenticity and traceability. Ensure storage conditions meet moisture sensitivity level requirements during handling.
Selection Notes
Select this component for designs requiring complementary dual N-channel functionality in a single package. Evaluate the 20-milliohm resistance against thermal constraints for the target application. Consider the SO-8 footprint compatibility when finalizing PCB layout dimensions. Assess gate charge characteristics for switching frequency requirements in the circuit topology.
Part Context
This device belongs to the XP series of power MOSFETs from YAGEO XSemi. The series focuses on silicon-based enhancement mode transistors optimized for efficiency. The dual configuration allows for space-saving implementations in half-bridge and full-bridge topologies compared to discrete single-channel alternatives.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
Is the XP3A020M available in a leaded package?
No, the component is designed for surface mount technology using an SO-8 package.
