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Product Detailed Parameters
- Description：MOSFET N/P-CH 100V 2A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2A
- Rds On (Max) @ Id, Vgs：230mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：497pF @ 50V, 717pF @ 50V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMC10A816N8TC is a complementary dual enhancement mode MOSFET in an SO-8 package. It integrates one N-channel (Q1) and one P-channel (Q2) device. The N-channel offers a maximum drain-source voltage of 100V, with on-resistance values of 0.230Ω at VGS=10V and 0.300Ω at VGS=4.5V. Maximum continuous drain currents are 2.1A at VGS=10V and 1.9A at VGS=4.5V. The P-channel provides -100V breakdown, with on-resistances of 0.235Ω at VGS=-10V and 0.320Ω at VGS=-4.5V. Its maximum continuous drain currents are -2.2A at VGS=-10V and -1.9A at VGS=-4.5V.
Feature Summary
- Complementary N/P-channel pair integrated into a single SO-8 surface-mount package
- Low on-resistance performance optimized for low gate drive voltages
- Fast switching speed characteristics suitable for high-frequency applications
- Qualified to JEDEC standards for high reliability
Applications
- DC motor controls
- Backlighting circuits
- D-class amplifier output stages
- DC fan bridge circuits
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. The 'N8' suffix indicates the SO-8 package type, while 'TC' specifies the tape and reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, prior to finalizing purchase orders.
Selection Notes
Select this component when a compact complementary MOSFET solution is required for 100V applications. Ensure the design accommodates the specified thermal resistance values under the intended PCB copper coverage conditions. Verify that the gate drive voltage aligns with the low-voltage drive capability to maximize efficiency. Consider the package dimensions and lead spacing during the layout phase to ensure proper solderability and mechanical stability.
Part Context
This part belongs to the DiodesZetex complementary MOSFET family designed for power management and switching applications. It serves as a direct replacement for discrete N and P-channel pairs in space-constrained designs. The device is manufactured using silicon technology and is housed in a standard SO-8 plastic package with matte tin annealed terminals over a copper lead frame.
Replacement Considerations
The datasheet explicitly states that the ZXMC10A816N8 is not recommended for new designs. Engineers should transition to the DMC10H172SSD as the designated replacement. Verify pinout compatibility and electrical parameter alignment between the legacy part and the recommended substitute before implementation.
