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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.9A, 2.1A
- Rds On (Max) @ Id, Vgs：120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：190pF @ 25V
- Power - Max：1.7W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：DFN3020B-8
- Grade：-
- Qualification：-
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Overview
The ZXMC3AMCTA is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated, housed in an 8-pin DFN3020B-8 surface-mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). The N-channel unit supports a drain-source voltage of 30V with a maximum continuous drain current of 3.7A at 25°C and an on-resistance of 120mΩ at VGS=10V. The P-channel unit features a -30V breakdown voltage, a maximum continuous drain current of -2.7A at 25°C, and an on-resistance of 210mΩ at VGS=-10V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration for efficient power management
- Low profile DFN3020B-8 package with a 6mm² footprint
- Thermally efficient design with low thermal resistance
- Fast switching speed capabilities
Applications
- MOSFET gate drive circuits
- LCD backlight inverters
- Motor control systems
- Portable electronic applications
Procurement Notes
Verify the specific ordering suffix 'CTA' corresponds to the 3000-unit reel quantity and 8mm tape width as defined in the manufacturer's documentation. Confirm that the required marking code 'C01' aligns with production specifications. Ensure compliance with RoHS3 and halogen-free requirements if mandated by the end-product standards. Cross-reference the datasheet revision DS35088 Rev. 1-2 for accurate electrical parameters during procurement validation.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage switching applications. The 6mm² footprint offers a significant size reduction compared to TSOP6 or SOT23-6 packages. Evaluate the thermal performance based on the specific PCB copper area and layer configuration, as power dissipation varies between single and dual active die operations. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance levels.
Part Context
The ZXMC3AMCTA belongs to the ZXMC3AMC product line from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes a DFN3020B-8 case with pre-plated NiPdAu leadframe terminals. It is qualified to AEC-Q101 standards for high reliability and is suitable for applications requiring a small form factor and efficient heat dissipation.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, ensure the replacement matches the 30V voltage rating, similar on-resistance values, and the DFN3020B-8 package dimensions. Verify that the pinout configuration (Drain, Gate, Source arrangement) is identical to prevent circuit redesign.
