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The ZXMC6A09DN8TA is a complementary enhancement mode MOSFET pair in an SO-8 package. The N-channel device features a drain-source voltage of 60V, continuous drain current of 5.1A at VGS=10V, and on-resistance of 0.045Ω. The P-channel counterpart offers -60V breakdown, -4.8A continuous current, and 0.055Ω on-resistance. Both utilize Zetex trench technology for low threshold and fast switching. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. Confirm that the component matches the required RoHS compliance standards and lead-free specifications before finalizing procurement orders.
Select this component for high-efficiency, low-voltage power management applications requiring complementary switching. Ensure the design accommodates the specified thermal resistance values under expected PCB copper coverage conditions.
This part belongs to the Zetex generation of trench MOSFETs designed for low voltage applications. It integrates both N-channel and P-channel devices into a single surface-mount package to simplify circuit layout and reduce component count.
No official substitutes are listed in the datasheet. Verify pinout compatibility and electrical parameters when considering alternative complementary MOSFET pairs.