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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 3.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.8A
- Rds On (Max) @ Id, Vgs：55mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：930pF @ 25V
- Power - Max：1.25W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMD65P03N8TA is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, originally developed by Zetex. It features a low-profile SOIC-8 package designed for high-density applications. The device provides a drain-source voltage of -30V and a continuous drain current of -4.8A at 25°C. Its static on-state resistance is typically 0.055Ω at VGS=-10V. Key dynamic parameters include a total gate charge of 25.7nC and fast switching times with turn-on delay of 3.8ns and fall time of 26.2ns.
Feature Summary
- Dual configuration in a single low-profile SOIC package
- Low on-resistance combined with fast switching speed
- Low threshold voltage enabling low gate drive requirements
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the manufacturer origin carefully, as the datasheet originates from Zetex plc while the part number is listed under Diodes Incorporated distribution. Confirm the specific ordering suffix (TA vs TC) matches the required reel quantity of 500 or 2500 units. Ensure the component meets the RoHS standards applicable to your region before finalizing procurement.
Selection Notes
Select this component when space constraints require a dual P-channel solution in an SOIC-8 footprint. The low on-resistance makes it suitable for low-voltage power management where efficiency is critical. Consider the thermal resistance values based on PCB copper coverage, as heat dissipation varies significantly between single-die and dual-die active configurations.
Part Context
This component belongs to the ZXM series of high-density MOSFETs introduced by Zetex. The series utilizes a unique structure to combine low on-resistance with fast switching capabilities. The ZXMD65P03N8 specifically addresses the need for compact dual-channel solutions in power electronics, offering a distinct alternative to discrete single-channel packages.
Replacement Considerations
No official substitute part numbers are documented in the provided source material. When evaluating alternatives, ensure the replacement supports dual P-channel configuration within an SOIC-8 package. Verify that the substitute maintains comparable VDS ratings, RDS(on) limits, and thermal performance characteristics.
