ZXMHC3A01T8TA

ZXMHC3A01T8TA

$2.08
  • Description:MOSFET 2N/2P-CH 30V 2.7A/2A SM8
  • Series:-

SKU:8077f5dba690 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N/2P-CH 30V 2.7A/2A SM8
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N and 2 P-Channel (Full Bridge)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.7A, 2A
  • Rds On (Max) @ Id, Vgs:120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:190pF @ 25V, 204pF @ 15V
  • Power - Max:1.3W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-223-8
  • Supplier Device Package:SM8
  • Grade:-
  • Qualification:-

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ZXMHC3A01T8TA

Overview

The ZXMHC3A01T8TA is a complementary enhancement mode MOSFET H-bridge from Diodes Incorporated, packaged in an SM-8 (SOT-223) surface mount case. It integrates one N-channel and one P-channel device within a single package to facilitate efficient power management. The N-channel transistor supports a drain-source voltage of 30V with a maximum continuous drain current of 3.1A at +25°C and an on-resistance of 0.12Ω at VGS=10V. The P-channel counterpart provides -30V breakdown and -2.3A continuous current capability with an on-resistance of 0.21Ω at VGS=-10V. Total power dissipation reaches 1.7W under standard PCB mounting conditions.

Feature Summary

  • Integrated complementary N-channel and P-channel MOSFETs configured as an H-bridge
  • Low on-resistance for high efficiency power management applications
  • Fast switching speed utilizing unique trench MOSFET structure
  • Low gate threshold voltage enabling low gate drive requirements

Applications

  • Single phase DC fan motor drive
  • High efficiency low voltage power management circuits

Procurement Notes

Verify the specific ordering suffix T8TA against the manufacturer's official documentation to confirm packaging details such as reel size and tape width. Ensure compliance with RoHS directives and halogen-free specifications required by the target application environment before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require a complete H-bridge configuration in a single surface-mount package. Evaluate thermal derating factors carefully, as continuous current ratings decrease significantly at elevated ambient temperatures above +25°C. Confirm that the 30V breakdown voltage aligns with the system's maximum operating voltage.

Part Context

This part belongs to the ZXMHC3A01 series of complementary MOSFETs designed for low-voltage applications. It utilizes Zetex trench technology to achieve fast switching speeds and low conduction losses. The SM-8 package provides a compact footprint suitable for dense printed circuit board layouts while maintaining adequate thermal performance for moderate power levels.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternative components, ensure the replacement maintains the same SM-8 pinout compatibility and matches or exceeds the 30V breakdown voltage and current handling capabilities of the original N-channel and P-channel devices.

ZXMHC3A01T8TAZXMHC3A01T8TA
$2.08
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