ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 60V 1.6A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel (Full Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：1.6A, 1.3A
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：166pF @ 40V, 233pF @ 30V
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
Download product information
Overview
The ZXMHC6A07T8TA is a complementary enhancement-mode MOSFET H-Bridge manufactured by Diodes Incorporated. It integrates two N-channel and two P-channel devices within an SM-8 (SOT-223) package. The N-channel transistor provides a drain-source voltage of 60V, with an on-resistance of 0.3Ω at VGS=10V and a continuous current rating of 1.8A. The P-channel counterpart offers -60V breakdown, 0.425Ω resistance at VGS=-10V, and supports -1.5A continuous current. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Integrates four channels (two N-type, two P-type) into a single surface-mount package for compact circuit design.
- Features low on-resistance characteristics that facilitate efficient operation with standard gate drive voltages.
- Designed for fast switching speeds supported by low input capacitance values.
Applications
- DC motor control systems
- DC-AC inverter circuits
Procurement Notes
Verify component authenticity through authorized distribution channels before integration. Confirm the specific suffix 'TA' matches the required reel size and packing quantity for automated assembly lines. Ensure compliance with RoHS directives and check for any recent product change notifications regarding manufacturing origin or material composition updates.
Selection Notes
Evaluate thermal dissipation requirements carefully as the device operates within a constrained power envelope. Verify that the driving circuitry can supply sufficient gate voltage to achieve the specified low on-resistance thresholds. Consider the maximum pulsed current ratings when designing protection circuits against transient load spikes during startup or fault conditions.
Part Context
This component belongs to the ZXMHC6A07 series of complementary MOSFETs designed for high-efficiency switching applications. It utilizes UMOS technology to minimize conduction losses while maintaining robust switching performance. The part is intended for designs requiring integrated bridge configurations without discrete component matching.
Replacement Considerations
The datasheet explicitly states that the ZXMHC6A07T8 is not recommended for new designs. Engineers should consult Diodes Incorporated directly for updated alternatives or qualified replacement parts suitable for modern production cycles.
