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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.7A SOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.7A
- Rds On (Max) @ Id, Vgs：200mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：279pF @ 10V
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6
- Grade：-
- Qualification：-
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Overview
The ZXMN2088DE6TA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT-26 package containing two independent channels. The device supports a drain-source voltage of 20V and offers low on-state resistance, rated at 0.200Ω at VGS=4.5V, 0.240Ω at VGS=2.5V, and 0.310Ω at VGS=1.8V. Continuous drain current reaches 2.1A at TA=+25°C with one active die. Thermal performance includes a junction-to-ambient thermal resistance of 96°C/W for dual-die operation. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual channel configuration in a compact SOT-26 package
- Low on-resistance optimized for high efficiency power management
- Compatible with low gate drive voltages including 1.8V, 2.5V, and 4.5V
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Power management functions
- Disconnect switches
- Relay driving and load switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details. The ZXMN2088DE6TA designation corresponds to tape and reel packaging. Confirm RoHS compliance and halogen-free status requirements prior to procurement. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.
Selection Notes
Select this component for applications requiring dual N-channel switching in a small footprint. Evaluate the RDS(ON) values at the specific gate drive voltage intended for the design, as resistance varies significantly between 1.8V and 4.5V logic levels. Consider the thermal derating factors when designing for continuous currents above 1.7A or elevated ambient temperatures.
Part Context
This part belongs to the ZXMN2088D series of dual N-channel MOSFETs from Diodes Incorporated. The 'E6' suffix indicates lead-free and RoHS compliant construction. The 'TA' suffix specifies tape and reel packaging. This series is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management solutions.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in SOT-26 packages with compatible 20V ratings and similar current capabilities. Verify pinout compatibility and thermal resistance characteristics when cross-referencing with alternative manufacturers. Ensure the replacement device meets the same AEC-Q101 qualification if automotive reliability is required.
