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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 5.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.9A
- Rds On (Max) @ Id, Vgs：25mOhm @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：22.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1880pF @ 10V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN2A04DN8TC is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 5.9A at 25°C. The device exhibits a low on-resistance of 25mΩ at VGS=4.5V and ID=5.9A, with a gate threshold voltage of 700mV. Packaged in an 8-SOIC surface-mount format, it supports junction temperatures from -55°C to +150°C. The component utilizes TRENCH technology for fast switching speeds and low gate drive requirements.
Feature Summary
- Dual N-channel configuration within a single low-profile SOIC package
- TRENCH MOSFET structure combining low on-resistance with fast switching speed
- Low gate threshold voltage enabling efficient logic-level driving
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the specific ordering suffix TC against official manufacturer documentation to confirm packaging specifications. The datasheet indicates this suffix corresponds to a 13-inch reel tape width containing 2500 units per reel. Ensure procurement channels source directly from authorized distributors or the manufacturer to guarantee authenticity and compliance with RoHS standards.
Selection Notes
Select this component for low-voltage power management applications requiring high efficiency. The dual channel design allows for space-constrained layouts while maintaining robust current handling capabilities. Consider the thermal resistance values relative to the PCB copper coverage when designing heat dissipation strategies for continuous operation.
Part Context
This part belongs to the ZXMN2 series of dual N-channel MOSFETs produced by Diodes Incorporated (formerly Zetex). The series is engineered for high-efficiency, low-voltage power management systems. The ZXMN2A04DN8 variant specifically targets applications needing compact packaging with enhanced switching performance compared to standard planar technologies.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-compatibility requires matching voltage ratings, current capabilities, and package dimensions. Verify that any substitute maintains equivalent thermal characteristics and switching parameters to ensure system reliability without redesigning the PCB layout.
