ZXMP3F37DN8TA

Overview

The ZXMP3F37DN8TA is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of -30V and a continuous drain current (Id) of -5.7A at 25°C. The device offers a maximum on-resistance (Rds(on)) of 25mΩ at Vgs = -10V and 41mΩ at Vgs = -4.5V. Key electrical parameters include a gate threshold voltage (Vgs(th)) ranging from -1.0V to -3.0V, a total gate charge (Qg) of 31.6nC, and an input capacitance (Ciss) of 1678pF. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 surface-mount package.

Feature Summary

• Dual P-channel configuration designed for high-efficiency power management applications
• Low on-resistance with fast switching speed capabilities
• Low threshold voltage enabling low gate drive requirements
• Qualified to AEC-Q101 standards for high reliability

Applications

• DC-DC Converters
• Power Management functions
• Disconnect Switches
• Motor control

Procurement Notes

Verify component authenticity through authorized channels as the part is discontinued. Confirm RoHS compliance and lead-free status against specific manufacturing date codes. Review datasheet thermal derating curves carefully for PCB layout constraints. Ensure replacement components match pinout and electrical specifications if sourcing alternatives.

Selection Notes

Select this component for dual P-channel switching needs requiring low on-resistance at standard logic levels. Evaluate thermal resistance values based on expected PCB copper coverage and airflow conditions. Consider the -30V rating and -5.7A continuous current limits when designing load circuits. Verify gate drive voltage compatibility with the specified Rds(on) thresholds.

Part Context

This component belongs to the ZXMP3F37 family of dual P-channel MOSFETs from Diodes Incorporated. It utilizes an SO-8 surface-mount package suitable for automated assembly. The device is marked with 'ZXMP3F37D' followed by a date code. It represents a discontinued product line intended for general-purpose power management tasks.

Replacement Considerations

Public confirmed substitute: FDS6975 (onsemi). When replacing, verify that the alternative matches the SO-8 footprint, -30V rating, and dual P-channel configuration. Check on-resistance and gate charge specifications to ensure equivalent switching performance.

FAQ

What is the maximum pulsed drain current for the ZXMP3F37DN8TA?

The maximum pulsed drain current (IDM) is -36A.

Is the ZXMP3F37DN8TA qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the reverse recovery time of the body diode?

The typical reverse recovery time (trr) is 16.2ns under test conditions of IS = -2.2A and di/dt = 100A/µs.