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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 2.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Rds On (Max) @ Id, Vgs：125mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：637pF @ 30V
- Power - Max：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMP6A17DN8QTC is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -60V and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum static drain-source on-resistance (RDS(ON)) of 0.125Ω at VGS = -10V and 0.190Ω at VGS = -4.5V. Continuous drain current (ID) reaches -3.4A at TA = +25°C, with a pulsed drain current (IDM) capability of -15.6A. Total gate charge (Qg) is 17.7nC at VGS = -10V. It is housed in an SO-8 package and qualified to AEC-Q101 standards.
Feature Summary
- Dual configuration designed for high efficiency power management applications
- Qualified to AEC-Q101 standards for automotive reliability
- Low profile SOIC package construction
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect Switches
- Motor Control
Procurement Notes
Verify the specific ordering suffix 'QTC' against official Diodes Incorporated documentation to confirm AEC-Q101 qualification and PPAP capability status. Ensure that the required packaging quantity matches the datasheet specification of 2,500 units per reel for this variant. Cross-reference the product marking code 'ZXMP6A17D' during physical inspection to validate authenticity.
Selection Notes
Select this component when a dual P-channel MOSFET solution is required for space-constrained designs utilizing SO-8 packages. Evaluate the RDS(ON) specifications at the intended gate drive voltage (-4.5V or -10V) to ensure conduction losses meet system efficiency targets. Confirm that the -60V breakdown voltage aligns with the maximum circuit operating voltages.
Part Context
This part belongs to the ZXMP6A17 series of dual P-channel MOSFETs from Diodes Incorporated. The standard commercial version is designated as ZXMP6A17DN8TA. The 'QTC' suffix indicates an automotive-grade variant that meets AEC-Q101 reliability standards and is capable of PPAP submission, while maintaining electrical equivalence to the standard commercial device.
Replacement Considerations
Direct electrically equivalent replacements include the standard commercial variant ZXMP6A17DN8TA. For automotive applications requiring AEC-Q101 qualification, verify availability of other automotive-qualified dual P-channel MOSFETs from Diodes Incorporated or alternative manufacturers offering identical SO-8 pinouts and matching -60V / 0.125Ω specifications.
