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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() CP10TD1-24A $18.90 | Powerex Inc. | IGBT MODULE 1200V 10A 96W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
![]() CP15TD1-24A $21.11 | Powerex Inc. | IGBT MODULE 1200V 15A 113W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
![]() CP20TD1-12A $21.89 | Powerex Inc. | IGBT MODULE 600V 20A 96W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
![]() CP25TD1-24A $30.18 | Powerex Inc. | IGBT MODULE 1200V 25A 138W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
![]() CP30TD1-12A $27.02 | Powerex Inc. | IGBT MODULE 600V 30A 114W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 8.8A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 5.7A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 7.2A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) |