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IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 CPV363M4F $17.43 | Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 16A 36W IMS-2 | - | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 11A 36W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 13A 36W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
CPV364M4F $30.11 | Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 27A 63W IMS-2 | - | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 20A 63W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
 DD1200S12H4HOSA1 $517.55 | Infineon Technologies | IGBT MODULE 1200V 1200A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
 DD450S45T3E4B5BPSA1 $1,101.60 | Infineon Technologies | IGBT MODULE | Bulk | - | - | - | - |
 DD600S17K3B2NOSA1 $673.47 | Infineon Technologies | IGBT MOD 1700V | Bulk | - | Chassis Mount | - | -40°C ~ 125°C (TJ) |
