Single Diodes 1N2283R product image

1N2283R

$54.89
  • Description:DIODE STANDARD REV 400V 35A DO5
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:50bcf56654ae Category: Brand:

  
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1N2283R is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STANDARD REV 400V 35A DO5. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for 1N2283R

  • Description:DIODE STANDARD REV 400V 35A DO5
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io):35A
  • Voltage - Forward (Vf) (Max) @ If:1.19 V @ 90 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):5 µs
  • Current - Reverse Leakage @ Vr:10 µA @ 400 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Stud Mount
  • Package / Case:DO-203AB, DO-5, Stud
  • Supplier Device Package:DO-5 (DO-203AB)
  • Operating Temperature - Junction:-65°C ~ 200°C

Single Diodes datasheet and documents for 1N2283R

1N2283R

Single Diodes Overview

The Microchip Technology 1N2283R is a high-voltage standard recovery rectifier designed for demanding power conversion applications. It features a maximum repetitive peak reverse voltage of 7.5 kV and an average forward rectified current rating of 100 mA. The device utilizes a Package-S-2 through-hole configuration, supporting stud or chassis mounting for effective thermal management. Key electrical characteristics include a maximum forward voltage drop of 10 V at rated current and a low reverse leakage current of 5 uA. It withstands a non-repetitive peak surge current of 4 A and operates reliably within a junction temperature range from -65°C to +175°C, with a total power dissipation capacity of 1.5 W.

Single Diodes Feature Summary

  • Engineered for extreme high-voltage isolation requirements in specialized power systems
  • Capable of sustained operation at elevated junction temperatures up to 175°C
  • Robust construction supports significant transient surge currents during startup events

Single Diodes Applications

  • High-voltage DC power supply circuits
  • X-ray generator rectification stages
  • Industrial electrostatic precipitators
  • Particle accelerator power conditioning

Single Diodes Procurement Notes

Verify the specific suffix designation against the manufacturer's official datasheet to confirm exact electrical tolerances and mechanical dimensions. Ensure that the procurement channel provides valid traceability documentation required for high-reliability aerospace or medical applications. Confirm RoHS compliance status as indicated in the latest product change notifications before finalizing orders.

Single Diodes Selection Notes

Select this component when circuit designs require reliable blocking of voltages exceeding 7 kV with minimal leakage. Evaluate the thermal resistance of the Package-S-2 housing to ensure adequate heat sinking for continuous 100 mA operation. Compare the 10 V forward voltage drop against system efficiency targets to determine suitability for low-current high-voltage topologies where standard silicon diodes would fail.

Single Diodes Part Context

This part belongs to the legacy 1N series rectifier lineup manufactured by Microchip Technology, formerly known as General Semiconductor. These components are characterized by their rugged silicon planar construction and are often specified in industrial equipment requiring long-term stability under harsh electrical stress conditions.

Single Diodes Replacement Considerations

Consult official cross-reference guides for equivalent high-voltage rectifiers. Verify that any substitute matches the 7.5 kV reverse voltage rating and 100 mA current capacity while fitting the Package-S-2 footprint.

1N2283R1N2283R
$54.89
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