1N4151TAP

Single Diodes Overview

The Vishay 1N4151TAP is a silicon epitaxial planar small signal fast switching diode housed in the DO-35 (DO-204AH) axial leaded package. It features a maximum repetitive peak reverse voltage of 75 V and a continuous forward current rating of 300 mA. The device exhibits a typical forward voltage of 1 V at 50 mA and a low reverse recovery time ranging from 2 ns to 4 ns depending on test conditions. Electrical characteristics include a maximum reverse leakage current of 50 nA at 50 V, with a breakdown voltage of 75 V at 5 μA. The component supports a junction temperature up to 175 °C and is supplied in an ammopack configuration.

Single Diodes Feature Summary

• Utilizes silicon epitaxial planar technology for high reliability
• Designed for extreme fast switching applications
• Features low reverse recovery time for efficient signal processing

Single Diodes Applications

• Extreme fast switches
• High-speed signal processing circuits
• General purpose rectification in electronic assemblies

Single Diodes Procurement Notes

Verify that the specific ordering code matches the required packaging format, as the TAP suffix indicates an ammopack supply option distinct from tape and reel configurations. Confirm compliance requirements against the material categorization definitions provided by the manufacturer. Ensure technical parameters are validated for the specific application environment before finalizing procurement decisions.

Single Diodes Selection Notes

Select this component when a small signal fast switching diode with axial leads is required. The 1N4151 offers higher surge current capabilities compared to standard general-purpose diodes. Consider the thermal resistance and power dissipation limits relative to the ambient operating temperature and mounting lead length to ensure reliable operation within the specified junction temperature range.

Single Diodes Part Context

The 1N4151 belongs to Vishay's family of small signal fast switching diodes manufactured using silicon epitaxial planar processes. This series is engineered for applications demanding rapid switching speeds and high reliability. The device is available in various packaging options, including tape and reel or ammopack formats, to accommodate different assembly line requirements.

Single Diodes Replacement Considerations

Cross-reference with other DO-35 packaged fast switching diodes if physical footprint constraints exist. Verify electrical compatibility regarding reverse voltage ratings and forward current capacity. Note that alternative components may exhibit different reverse recovery times or thermal characteristics requiring circuit re-evaluation.

Single Diodes FAQ

What is the maximum repetitive peak reverse voltage for the 1N4151?

The maximum repetitive peak reverse voltage (VRRM) is 75 V.

How does the reverse recovery time vary under different test conditions?

The reverse recovery time is typically 4 ns when IF = IR = 10 mA and iR = 1 mA, and reduces to 2 ns when IF = 10 mA, VR = 6 V, iR = 0.1 x IR, and RL = 100 Ω.