1N4305-1E3/TR

Overview

The Microchip Technology 1N4305-1E3/TR is a small signal switching diode designed for high-speed applications. It features a peak reverse voltage of 75 V and a maximum forward current of 10 mA. The device exhibits a fast recovery time of 2 ns and a low maximum reverse current of 100 nA. Electrical characteristics include a forward voltage of 850 mV and a maximum diode capacitance of 2 pF. It operates within a temperature range of -65°C to +150°C and is housed in a DO-35-2 through-hole package.

Feature Summary

• High-speed switching capability with 2 ns recovery time
• Low leakage current for signal integrity
• Wide operating temperature range up to 150°C

Applications

• Signal or computer diode circuits
• High-speed switching applications
• General purpose rectification

Procurement Notes

Verify the specific suffix 'TR' indicates reel packaging when ordering. Confirm RoHS compliance status via official documentation as required by project specifications. Ensure the DO-35-2 through-hole package matches the target PCB footprint design constraints before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring fast recovery times and low capacitance in a standard axial leaded package. The 75 V reverse voltage rating suits low-voltage signal processing tasks. Verify that the 10 mA forward current limit aligns with the circuit's load requirements and thermal management capabilities.

Part Context

This part belongs to the Microchip Technology diode family, specifically categorized under small signal switching diodes. It serves as a lead-free variant of the standard 1N4305 series, adhering to environmental regulations while maintaining performance specifications for general-purpose electronic applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.