1N4454_T50R

Overview

The onsemi 1N4454_T50R is a silicon epitaxial planar switching diode housed in the DO-35 axial leaded package. It features a maximum repetitive peak reverse voltage of 75 V and an average forward rectified current of 200 mA. The device exhibits a fast recovery time of 4 ns with a maximum forward voltage drop of 1 V at 10 mA. Reverse leakage current is limited to 100 nA at 75 V. It operates within a junction temperature range of -65 °C to +175 °C and supports a maximum surge current of 4 A.

Feature Summary

• Fast switching capability with ultra-fast recovery characteristics
• High thermal stability for extended operating temperatures
• Low leakage current for efficient signal isolation

Applications

• High-speed digital logic circuits
• Clamping and protection in computer systems
• Pulse generation and shaping networks

Procurement Notes

Verify the specific suffix T50R against official onsemi documentation to confirm tape and reel packaging specifications. Ensure the component meets required environmental standards and quality levels before integration into final designs.

Selection Notes

Select this component when a standard small-signal diode requires faster recovery times than general-purpose types. The DO-35 package suits through-hole applications needing robust mechanical leads. Compare performance against similar 75V switching diodes from other manufacturers for pin compatibility.

Part Context

This part belongs to the 1N4454 family of high-speed switching diodes. These components are widely used in consumer electronics and industrial control systems where rapid switching speeds are critical. The 1N4454 series provides a reliable alternative to older germanium diodes with superior thermal performance.

Replacement Considerations

Direct substitutes include the 1N4448, 1N4451, and 1N4452 series diodes. Verify that replacement parts match the 75V reverse voltage rating and 4 ns recovery time requirements.