1N4732E3/TR13

Overview

The Microsemi Corporation 1N4732E3/TR13 is a silicon Zener diode with a nominal voltage of 4.7 V and a power dissipation rating of 1 W at 25°C. It features a 5% voltage tolerance, a maximum dynamic impedance of 8 Ohms at a test current of 53 mA, and a maximum reverse leakage current of 10 µA at 1 V. The device operates within a temperature range of -65°C to +150°C and utilizes an axial DO-41 (DO-204AL) plastic package.

Feature Summary

• Provides stable voltage regulation across a broad operating current and temperature range
• Features flexible axial-lead mounting terminals for through-hole applications
• Constructed with a void-free transfer molded thermosetting epoxy body meeting UL94V-0 standards

Applications

• Voltage regulation in electronic circuits
• Overvoltage protection systems
• Reference voltage generation

Procurement Notes

Verify the specific suffix configuration against official datasheets to confirm RoHS compliance and packaging details. Confirm that the TR suffix indicates tape and reel packaging per EIA-296 standards. Ensure compatibility with existing thermal management designs given the specified junction-to-lead thermal resistance values.

Selection Notes

Select this component when a standard 4.7 V reference with 5% tolerance is required in a high-power 1 W axial package. Consider the plastic construction for lower thermal resistance compared to glass-body options. Verify that the 8 Ohm dynamic impedance meets the circuit's ripple rejection requirements.

Part Context

This part belongs to the 1N4728AP thru 1N4764AP series of 1.0 watt Zener diodes manufactured by Microsemi. The series offers extensive voltage selection from 3.3 to 100 volts. The 'e3' suffix denotes RoHS compliant devices with annealed matte-Tin plating, while the 'TR' suffix indicates tape and reel packaging.

Replacement Considerations

Equivalent parts include other manufacturers' 1N4732A variants in DO-41 packages. Surface mount equivalents are available as SMAJ4732A or MLL4732A.