1N4733A-TAP

Overview

The Vishay 1N4733A-TAP is a silicon planar power Zener diode in the DO-41 (DO-204AL) axial leaded package. It provides a nominal Zener voltage of 5.1 V with a standard tolerance of ±5%. The device features a maximum power dissipation of 1.3 W and a junction temperature rating of 175 °C. Electrical characteristics include a test current of 49 mA, a maximum reverse leakage current of 10 µA at 1 V, and a dynamic impedance of 7 Ω at the test current.

Feature Summary

• Designed for use in stabilizing and clipping circuits with high power ratings
• Utilizes silicon planar technology for robust performance
• Features UL 94 V-0 flammability rated plastic molding compound

Applications

• Voltage stabilization
• Clipping circuits

Procurement Notes

Verify that the ordering suffix -TAP corresponds to the 5000-unit ammopack configuration as specified in the official datasheet. Confirm compliance requirements against the material categorization definitions provided by the manufacturer. Ensure the component meets specific application needs regarding thermal equilibrium conditions during DC measurements.

Selection Notes

Select this component when a 5.1 V reference or regulation point is required within a through-hole design. The 1.3 W power rating supports applications demanding higher dissipation than standard low-power diodes. Verify that the operating environment remains within the specified storage and junction temperature limits to maintain reliability.

Part Context

This part belongs to the 1N4728A to 1N4761A series of single circuit configuration Zener diodes manufactured by Vishay Semiconductors. The series covers a broad range of nominal voltages from 3.3 V to 75 V. All devices share the same DO-41 package and general electrical construction principles defined in document number 85816.

Replacement Considerations

Cross-reference other manufacturers' 1N4733A equivalents to ensure pinout compatibility and matching electrical tolerances. Verify that substitute components meet the same 1.3 W power dissipation and 175 °C junction temperature specifications.