1N4770/TR

Overview

The Microchip Technology 1N4770/TR is a silicon Zener diode with a nominal voltage of 9.1 V and a tolerance of ±5%. It features a maximum power dissipation of 500 mW and operates within a temperature range of -65°C to +175°C. The device utilizes a DO-204AH (DO-35) axial through-hole package. Key electrical characteristics include a maximum reverse leakage current of 10 µA at 25°C and a maximum Zener impedance of 200 Ohms.

Feature Summary

• Temperature compensated Zener reference design
• Metallurgically bonded double plug construction
• Low current operation range

Applications

• Voltage regulation circuits
• Precision voltage reference applications
• Overvoltage protection stages

Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm packaging configuration, as trailing characters may indicate reel or tube variations. Ensure the component meets required environmental compliance standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring stable voltage references in low-current environments. The wide operating temperature range supports industrial applications. Confirm that the 500 mW power rating and 200 Ohm impedance are sufficient for the specific circuit load requirements.

Part Context

This part belongs to the 1N47xx series of general-purpose Zener diodes manufactured by Microchip Technology. The series offers various voltage options within the DO-35 package, providing a standardized solution for discrete voltage regulation tasks across consumer and industrial electronics sectors.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in temperature coefficient or leakage specifications.