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1N5228B-TAP is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ZENER 3.9V 500MW DO204AH. Review the specifications below when checking this part for your BOM.
The Vishay 1N5228B-TAP is a silicon planar power Zener diode in the DO-35 (DO-204AH) axial leaded package. It provides a nominal Zener voltage of 3.9 V with a standard tolerance of ±5%. The device operates at a test current of 20 mA and dissipates up to 500 mW of power. Key electrical characteristics include a maximum reverse leakage current of 10 µA, a dynamic resistance of 23 Ω, and a typical temperature coefficient of -0.06 %/K.
Verify that the ordering code matches the specific suffix required for your packaging needs. Confirm the component meets RoHS compliance standards and material categorization requirements before finalizing procurement. Ensure the selected variant aligns with the intended thermal equilibrium conditions and circuit design parameters.
Select this component when a precise 3.9 V reference is needed in an axial leaded form factor. Consider the negative temperature coefficient for thermal stability requirements. Evaluate the 500 mW power dissipation limit against the expected load current to ensure safe operation within the specified junction temperature range.
This part belongs to the 1N5221 to 1N5267 series of small signal Zener diodes manufactured by Vishay Semiconductors. The series covers a broad range of Zener voltages from 2.4 V to 75 V. The 'B' suffix indicates a standard ±5% voltage tolerance, distinguishing it from tighter tolerance variants.
Compatible substitutes include other manufacturers' 1N5228B equivalents in the DO-35 package. Verify that replacement parts match the 3.9 V nominal voltage, 500 mW power rating, and 23 Ω dynamic resistance specifications.
The 'TAP' suffix denotes that the diodes are supplied in an ammopack containing 10,000 units per tape.
The device exhibits a typical temperature coefficient of -0.06 %/K, meaning the voltage decreases slightly as the junction temperature increases.
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