1N5255B-TAP

Single Zener Diodes Overview

The Vishay General Semiconductor - Diodes Division 1N5255B-TAP is a silicon planar power Zener diode with a nominal voltage of 28 V and ±5% tolerance. It operates in the DO-35 (DO-204AH) axial package, dissipating up to 500 mW at 25 °C ambient temperature. The device features a maximum reverse leakage current of 0.1 µA at 21 V and a typical dynamic resistance of 44 Ω at a test current of 4.5 mA. It supports a junction temperature range from -65 °C to +175 °C.

Single Zener Diodes Feature Summary

• Utilizes silicon planar technology for robust voltage regulation
• Features glass passivated junctions within a molded DO-35 body
• Provides low Zener impedance and stable regulation characteristics

Single Zener Diodes Applications

• Voltage stabilization circuits
• Reference voltage generation
• Overvoltage protection

Single Zener Diodes Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging details. Confirm that the component meets required material categorization standards for compliance. Ensure thermal management aligns with specified absolute maximum ratings during operation.

Single Zener Diodes Selection Notes

Select this component when a precise 28 V reference is required in an axial through-hole configuration. Evaluate the 500 mW power dissipation limit relative to expected operating currents. Consider the ±5% tolerance specification for circuit accuracy requirements.

Single Zener Diodes Part Context

This part belongs to the 1N5221 to 1N5267 series of small signal Zener diodes manufactured by Vishay Semiconductors. The series covers a wide voltage range from 2.4 V to 75 V, providing standardized options for various electronic design applications requiring reliable voltage regulation.

Single Zener Diodes Replacement Considerations

Cross-reference with other manufacturers offering equivalent DO-35 packaged Zener diodes rated at 28 V and 500 mW. Verify matching electrical parameters such as dynamic resistance and leakage current before substitution.