23LCV1024-E/SN

Memory IC Overview

The Microchip Technology 23LCV1024-E/SN is a 1 Mbit (128K x 8) Serial Static Random Access Memory device. It operates within a supply voltage range of 2.5 V to 5.5 V and supports a maximum clock frequency of 20 MHz via an SPI-compatible bus interface. The component features low-power CMOS technology with standby current as low as 4 µA at +85°C. It includes external battery backup support through the VBAT pin, ensuring data retention when VCC falls below the trip point. The device is housed in an 8-lead Small Outline Integrated Circuit (SOIC) package.

Memory IC Feature Summary

• Supports unlimited read and write cycles for high endurance applications.
• Enables data preservation during power loss via external battery connection to the VBAT pin.
• Operates in Byte, Page, and Sequential modes for flexible memory access patterns.
• Compatible with standard SPI protocols and offers Dual I/O (SDI) mode for increased throughput.

Memory IC Applications

• Data logging systems requiring persistent storage without non-volatile memory latency.
• Industrial control units needing fast random access memory with battery backup capabilities.
• Automotive electronics utilizing serial SRAM for temporary data buffering and configuration storage.

Memory IC Procurement Notes

Verify that the ordering suffix correctly identifies the SN package variant, which corresponds to the 8-lead SOIC form factor. Confirm the temperature grade matches the specific application requirements, noting that the 'E' suffix typically denotes extended industrial ranges distinct from the standard 'I' grade. Ensure compatibility with the host microcontroller's SPI voltage levels, as the device supports both 2.5V and 5.5V logic interfaces.

Memory IC Selection Notes

Select this component when design constraints require a small 8-pin footprint combined with high-speed serial access. The 23LCV1024-E/SN is appropriate for systems demanding unlimited write endurance where data must be retained during power interruptions. Consider the SDI capability if higher data rates are necessary compared to standard single-line SPI operations. Evaluate the power budget against the specified read and standby currents to ensure compliance with system energy efficiency targets.

Memory IC Part Context

This device belongs to the 23LCV1024 family of serial SRAMs manufactured by Microchip Technology. The family shares common architectural features including SPI/SDI interfaces and battery backup functionality. Variations within the series differ primarily by operating temperature ranges, physical package types such as TSSOP or PDIP, and specific electrical characteristics tailored for different environmental conditions.

Memory IC Replacement Considerations

Direct substitutes include other variants within the 23LCV1024 series, such as those in TSSOP or PDIP packages, provided the pinout remains compatible. Cross-referencing with similar 1 Mbit serial SRAM devices from other manufacturers requires careful verification of voltage tolerances, pin configurations, and command set compatibility to ensure functional equivalence.

Memory IC FAQ

How does the device handle data retention when main power fails?

The 23LCV1024-E/SN utilizes an internal switch connected to the VBAT pin. When the VCC supply drops below the trip point, the device automatically switches to the external backup supply connected to VBAT, maintaining SRAM contents until power is restored.

What is the purpose of the NC pin on the SOIC package?

Pin 3 is designated as No Connect (NC). It is not internally connected to any circuitry and should remain unconnected in the application design to avoid potential interference or short circuits.

Can the device operate in dual I/O mode without hardware changes?

Yes, the device supports Serial Dual Interface (SDI) mode using the existing SI and SO pins, which function as SIO0 and SIO1 respectively. This mode is activated by issuing the EDIO instruction via the standard SPI interface.