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2EDN7533FXTMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR LOW-SIDE 8SOIC. Review the specifications below when checking this part for your BOM.
The Infineon Technologies 2EDN7533FXTMA1 is a dual-channel low-side gate driver optimized for standard and superjunction MOSFETs as well as GaN power switches. It features a non-isolated topology with an input supply voltage range of 4.2 V to 20 V. The device provides symmetrical output currents of 5 A source and sink capability. Propagation delays are specified at 19 ns for both turn-on and turn-off transitions. Undervoltage lockout thresholds are set at 4.2 V (On) and 3.9 V (Off).
Verify the specific package variant, as datasheets reference PG-DSO-8 while distributors list PG-TSSOP-8. Confirm industrial quality grade compliance and RoHS status against project requirements. Ensure input voltage ranges align with system logic levels before integration.
Select this component for applications requiring high current drive for fast-switching devices like GaN or superjunction MOSFETs. The non-isolated design suits low-side configurations where galvanic isolation is not required between control and power grounds.
This part belongs to the EiceDRIVER™ 2EDN series, which utilizes advanced 0.13 µm technology. The series offers various channel counts and packages to support high-power density designs. It complements other low-side drivers within the Infineon portfolio for diverse industrial needs.
Consult the official replacement guide for direct substitutes within the 2EDN family. Verify pin compatibility and electrical parameters when considering alternatives from other manufacturers.
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