Gate Driver 2EDN7533FXTMA1 product image

2EDN7533FXTMA1

$0.49
  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b46ce6d62b3a Category: Brand:

  
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2EDN7533FXTMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR LOW-SIDE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for 2EDN7533FXTMA1

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 20V
  • Logic Voltage - VIL, VIH:1.4V, 1.9V
  • Current - Peak Output (Source, Sink):5A, 5A
  • Input Type:Inverting
  • Rise / Fall Time (Typ):8.6ns, 6ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:PG-DSO-8
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

Gate Driver datasheet and documents for 2EDN7533FXTMA1

2EDN7533FXTMA1

Gate Driver Overview

The Infineon Technologies 2EDN7533FXTMA1 is a dual-channel low-side gate driver optimized for standard and superjunction MOSFETs as well as GaN power switches. It features a non-isolated topology with an input supply voltage range of 4.2 V to 20 V. The device provides symmetrical output currents of 5 A source and sink capability. Propagation delays are specified at 19 ns for both turn-on and turn-off transitions. Undervoltage lockout thresholds are set at 4.2 V (On) and 3.9 V (Off).

Gate Driver Feature Summary

  • Dual-channel architecture designed for driving standard, superjunction MOSFETs, and GaN devices.
  • High peak output current capability of 5 A for both sourcing and sinking operations.
  • Symmetrical switching performance with 19 ns propagation delay for both turn-on and turn-off states.

Gate Driver Applications

  • Driving standard and superjunction MOSFETs in power conversion circuits.
  • Gate control for Gallium Nitride (GaN) power switch devices.
  • Industrial power supply applications requiring robust low-side switching.

Gate Driver Procurement Notes

Verify the specific package variant, as datasheets reference PG-DSO-8 while distributors list PG-TSSOP-8. Confirm industrial quality grade compliance and RoHS status against project requirements. Ensure input voltage ranges align with system logic levels before integration.

Gate Driver Selection Notes

Select this component for applications requiring high current drive for fast-switching devices like GaN or superjunction MOSFETs. The non-isolated design suits low-side configurations where galvanic isolation is not required between control and power grounds.

Gate Driver Part Context

This part belongs to the EiceDRIVER™ 2EDN series, which utilizes advanced 0.13 µm technology. The series offers various channel counts and packages to support high-power density designs. It complements other low-side drivers within the Infineon portfolio for diverse industrial needs.

Gate Driver Replacement Considerations

Consult the official replacement guide for direct substitutes within the 2EDN family. Verify pin compatibility and electrical parameters when considering alternatives from other manufacturers.

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