2N3811

Bipolar Transistor Arrays Overview

The Microsemi Corporation 2N3811 is a dual PNP small-signal bipolar junction transistor (BJT) constructed from silicon. It integrates two separate elements within a single package, typically housed in a TO-78 metal can or similar hermetic sealed configuration. The device supports a maximum collector current of 0.05 A and withstands a collector-emitter breakdown voltage of 60 V. Designed for high reliability, it features a minimum DC current gain of 250 and operates at junction temperatures up to 200 °C. This component is classified under the MIL-19500 standard with radiation hardness ratings.

Bipolar Transistor Arrays Feature Summary

• Dual PNP configuration integrating two independent transistors in one package
• Hermetically sealed metal can construction for environmental protection
• High radiation hardness capability suitable for harsh environments
• Silicon technology ensuring stable operation at elevated temperatures

Bipolar Transistor Arrays Applications

• Military aerospace circuits requiring radiation tolerance
• High-reliability analog signal processing systems
• Industrial control applications demanding long-term stability

Bipolar Transistor Arrays Procurement Notes

Verify the specific suffix code on the component marking to confirm the exact package variant and manufacturer lot. Cross-reference the datasheet revision date with your design requirements to ensure parameter consistency. Confirm radiation hardness certification levels if operating in nuclear or space environments. Check for obsolescence status as this series may be discontinued by certain manufacturers.

Bipolar Transistor Arrays Selection Notes

Select this component when a dual PNP topology is required in a hermetic package. Ensure the 60 V collector-emitter voltage rating exceeds the circuit's peak operating voltage. Verify that the 0.05 A current limit accommodates the load requirements. Consider the TO-78 footprint compatibility during PCB layout planning.

Bipolar Transistor Arrays Part Context

The 2N3811 belongs to the legacy military-grade small-signal BJT family produced by Microsemi and other qualified vendors. It serves as a rugged alternative to commercial plastic-packaged transistors. The part is often specified in defense and aerospace schematics where reliability and radiation resistance are critical design constraints.

Bipolar Transistor Arrays Replacement Considerations

JAN2N3811L and JANTXV2N3811L are documented variants within the same family. Verify pinout compatibility before substitution. Other manufacturers may offer equivalent parts under different numbering schemes.