2N3904CBU

Single Bipolar Transistors Overview

The onsemi 2N3904CBU is an NPN general-purpose amplifier and switch transistor housed in a TO-92-3 package. It supports a collector-emitter voltage of 40 V, a collector-base voltage of 60 V, and a continuous collector current of 200 mA. The device features a maximum power dissipation of 625 mW and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 300 at 10 mA, a transition frequency (fT) of 300 MHz, and a collector-emitter saturation voltage of 0.3 V max at 50 mA.

Single Bipolar Transistors Feature Summary

• Designed for general-purpose amplification and switching applications with a dynamic range extending to 100 mA as a switch and 100 MHz as an amplifier.
• Utilizes silicon planar epitaxial construction for high reliability and stable performance across the specified operating temperature range.

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Electronic switching circuits
• Driver stages for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official documentation, as variations exist between bulk, ammo pack, and tape-and-reel configurations. Confirm that the specific part number matches the required packing method and lead form. Ensure compliance with RoHS directives if applicable to the target market. Cross-reference datasheet revisions to confirm thermal resistance values and absolute maximum ratings remain consistent with design requirements.

Single Bipolar Transistors Selection Notes

Select this component for cost-effective discrete amplification or switching tasks where moderate current handling and standard voltage ratings are sufficient. Consider the TO-92 package constraints regarding thermal dissipation when designing heat management strategies. Evaluate the hFE spread and fT specifications against circuit bandwidth and gain requirements. Compare alternative packages like SOT-23 if board space is limited, noting differences in power dissipation capabilities.

Single Bipolar Transistors Part Context

This device belongs to the widely recognized 2N3904 family of NPN transistors, originally standardized and later manufactured by Fairchild Semiconductor before integration into ON Semiconductor. The product line includes variants such as MMBT3904 and PZT3904 in different packages. It serves as a fundamental building block in analog and digital electronics, offering a balance of performance and availability for general engineering needs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the MMBT3904 (SOT-23), PZT3904 (SOT-223), and generic equivalents like BC547 or 2N3904 from other manufacturers. Verify pinout compatibility and ensure thermal and electrical ratings meet or exceed original specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 40 V when measured at IC = 1.0 mA and IB = 0.

How does the DC current gain vary with collector current?

The DC current gain (hFE) ranges from 40 to 300 at IC = 10 mA. It decreases to a minimum of 40 at IC = 0.1 mA and drops to 30 at IC = 100 mA.

What is the typical noise figure for this transistor?

The noise figure is typically 5.0 dB when measured at IC = 100 μA, VCE = 5.0 V, RS = 1.0 kΩ, and frequencies between 10 Hz and 15.7 kHz.