2SB1730TL

Single Bipolar Transistors Overview

The 2SB1730TL is a PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage of 12 V and a continuous collector current of -2 A. The device operates in an SOT-323T-3 surface-mount package with a power dissipation rating of 400 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 270 to 680 at -200 mA, a transition frequency of 360 MHz, and a maximum operating temperature of +150 C.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Compact SMD package suitable for space-constrained designs
• Wide operating temperature range for robust performance

Single Bipolar Transistors Applications

• DC-DC converter circuits
• General-purpose switching applications
• Amplifier stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL against official ROHM documentation to confirm reel packaging specifications. Ensure the component meets RoHS requirements for your target market. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage PNP transistor with high current gain is required in a small footprint. Compare the 400 mW power dissipation limit against thermal constraints. Consider the 12 V breakdown voltage relative to circuit supply levels to ensure safe operation margins.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1730 series of PNP transistors designed for general-purpose use. It shares similar electrical characteristics with other members of the family but differs in packaging or specific grading. The SOT-323T-3 package allows for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The QSZ4TR is listed as an equivalent complex transistor option. Verify pinout compatibility and thermal performance before substitution.