2SB865-AE

Single Bipolar Transistors Overview

The 2SB865-AE is a PNP Darlington transistor manufactured by onsemi, designed for small-signal applications. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 1.5 A. The device operates with a transition frequency of 120 MHz and supports a maximum power dissipation of 900 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 4000 at 500 mA and 2 V, with a collector cutoff current of 100 nA. The component is housed in a 3-MP through-hole package.

Single Bipolar Transistors Feature Summary

• Utilizes Darlington configuration to achieve high current amplification suitable for signal processing tasks.
• Engineered for reliable operation within specified thermal and voltage limits for general-purpose switching.

Single Bipolar Transistors Applications

• Small-signal amplification circuits
• General-purpose switching applications
• Driver stages requiring high current gain

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure compliance with required environmental standards and packaging specifications. Confirm that the procurement channel provides valid traceability for the component's origin. Ensure that the received parts match the exact part number designation to avoid functional mismatches in circuit design.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain PNP transistor is required for low-power switching or amplification. The 50 V voltage rating and 1.5 A current capacity define its operational boundaries. Consider the 3-MP package constraints for board layout and thermal management requirements relative to the 900 mW power dissipation limit.

Single Bipolar Transistors Part Context

This component belongs to the family of single bipolar junction transistors offered by onsemi. It serves as a discrete semiconductor solution for analog and digital circuits where moderate power handling and high gain are necessary. The device complements other small-signal transistors in the manufacturer's portfolio for diverse electronic system designs.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for compatible substitutes. Verify pinout compatibility and electrical parameter equivalence before substituting. Ensure any alternative component meets the same voltage, current, and package specifications to maintain circuit integrity.