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2SC1815-GR PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 50V 150MA 400MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC1815-GR PBFREE
- Description：50V 150MA 400MW TH TRANSISTOR-SM
- Series：2SC1815
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：150 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 2mA, 6V
- Power - Max：400 mW
- Frequency - Transition：80MHz
- Operating Temperature：-55°C ~ 125°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC1815-GR PBFREE
Single Bipolar Transistors Overview
The Central Semiconductor Corp 2SC1815-GR PBFREE is a silicon NPN transistor manufactured via the epitaxial planar process. It features a collector-emitter voltage of 50 V, a collector current of 150 mA, and a gain bandwidth product of 80 MHz. The device dissipates 400 mW of power and operates within a temperature range of -55°C to +125°C. It utilizes a TO-92-3 package with an emitter-base voltage of 5 V.
Single Bipolar Transistors Feature Summary
- Epitaxial planar silicon construction for general-purpose applications
- High gain bandwidth product suitable for RF circuits
- Wide operating temperature range for robust performance
Single Bipolar Transistors Applications
- General purpose switching
- Audio amplification stages
- RF signal processing
Single Bipolar Transistors Procurement Notes
Verify the specific suffix GR against official datasheets to confirm binning or gain characteristics. Confirm RoHS compliance status through manufacturer documentation. Ensure the TO-92-3 package matches PCB footprint requirements. Validate thermal dissipation limits under actual load conditions before finalizing procurement decisions.
Single Bipolar Transistors Selection Notes
Select this component when a 50 V NPN transistor with 150 mA capability is required. The 80 MHz bandwidth supports high-frequency operations. Consider the 400 mW power dissipation limit for thermal management. The TO-92-3 package suits through-hole mounting constraints.
Single Bipolar Transistors Part Context
This part belongs to the Central Semiconductor 2SC1815 series of silicon NPN transistors. The series is designed for general-purpose use using epitaxial planar technology. The GR variant specifies particular electrical parameters within the standard family lineup.
Single Bipolar Transistors Replacement Considerations
Cross-reference with other 2SC1815 variants from different manufacturers. Verify pinout compatibility for TO-92-3 packages. Check if alternative suppliers offer identical 50 V and 150 mA ratings.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
