2SC2235-O(T6FJT,AF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235-O(T6FJT,AF) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a collector-emitter breakdown voltage of 120 V and a maximum collector current of 800 mA. The device provides a DC current gain (hFE) ranging from 80 to 160 at a collector current of 100 mA. Its transition frequency is typically 120 MHz, with a collector output capacitance of 30 pF maximum. Designed for audio power amplifier and driver stage applications, it operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor
• High-voltage capability suitable for demanding amplifier stages
• Optimized for low noise and high gain in audio circuits

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplifiers
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific 'O' hFE classification bin during procurement to ensure the component meets the required 80 to 160 gain range for your design. Confirm RoHS compatibility status directly with the manufacturer or authorized distributors, as environmental compliance varies by production lot. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing the design.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with a minimum 120 V collector-emitter breakdown is required. Ensure the application demands a collector current capacity of at least 800 mA and fits within the 900 mW power dissipation limit. Verify that the required DC current gain falls within the 80 to 160 range specified for the 'O' suffix variant.

Single Bipolar Transistors Part Context

This component belongs to the 2SC2235 series of general-purpose NPN transistors designed for audio and driver applications. It utilizes Toshiba's proprietary PCT process to achieve stable performance characteristics. The part is housed in a JEDEC TO-92MOD plastic package, providing a compact form factor suitable for through-hole mounting on standard printed circuit boards.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary PNP counterpart. For direct replacement, verify that the substitute part matches the 120 V breakdown voltage, 800 mA current rating, and TO-92MOD package dimensions.