5082-3379#T25

RF Diode Overview

The Broadcom Limited 5082-3379#T25 is a PIN diode designed for RF switching and attenuating applications. It features an effective carrier lifetime of 1300 ns, a breakdown voltage of 50 V, and a residual series resistance of 0.4 Ω. The device has a total capacitance of 0.4 pF and operates within a junction temperature range of -65°C to +150°C with a power dissipation rating of 250 mW at 25°C.

RF Diode Feature Summary

• Low harmonic distortion
• Large dynamic range
• Low series resistance
• Low capacitance

RF Diode Applications

• RF duplexers
• Antenna switching matrices
• Digital phase shifters
• Time multiplex filters
• Variable RF attenuators
• Automatic gain control circuits
• Electrically tuned filters
• Analog phase shifters
• RF limiters

RF Diode Procurement Notes

Verify the component status as the datasheet indicates it obsoletes part number 5989-3339EN. Confirm RoHS compliance and material declarations through official manufacturer channels or authorized distributors, as environmental data may vary by production batch. Ensure the ordering suffix matches the required tape and reel quantity specifications.

RF Diode Selection Notes

Select this component for low-power switching applications requiring specific RF current-controlled resistor characteristics. Consider the 50 V breakdown voltage and 0.4 Ω series resistance when designing variable attenuators or automatic gain control circuits. Verify that the 1300 ns carrier lifetime aligns with the required response time for analog phase shifting or limiting functions.

RF Diode Part Context

This component belongs to the 5082-3xxx series of general-purpose PIN diodes intended for RF switching and attenuating. It shares the Outline 15 package style with other devices in the family, such as the 5082-3001 and 5082-3077, but offers distinct electrical parameters optimized for specific attenuation and control applications.

RF Diode Replacement Considerations

The datasheet explicitly states that this product obsoletes part number 5989-3339EN. When replacing obsolete units, verify if 5989-3339EN is available from legacy stock or if alternative sourcing is required from authorized distributors.

RF Diode FAQ

What is the typical effective carrier lifetime for the 5082-3379?

The typical effective carrier lifetime is 1300 ns.

What is the maximum power dissipation rating?

The maximum power dissipation is 250 mW at 25°C, derating linearly to zero at 150°C.

What package style does the 5082-3379 use?

It uses the Avago Outline 15 package, which features a glass hermetic seal with dumet leads.