71321SA25J8

Memory IC Overview

The Renesas Electronics Corporation 71321SA25J8 is a dual-port static random access memory (SRAM) integrated circuit. It features a storage capacity of 16 kbit organized as 2K x 8. The device operates with an asynchronous parallel interface and has a maximum access time of 25 ns. It requires a supply voltage between 4.5 V and 5.5 V, with a maximum power consumption of 110 mA. The component supports surface mount installation in a 52-PLCC package and functions within a commercial temperature range of 0°C to +70°C.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access by two processors
• Asynchronous operation without the need for external clock signals
• Integrated interrupt capability for efficient data synchronization

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded controllers
• Data logging applications requiring rapid write cycles

Memory IC Procurement Notes

This component is officially designated as End-of-Life (EOL) by Renesas Electronics Corporation. Manufacturers have issued discontinuance notices indicating that production will cease. Procurement is restricted to existing stock or limited distribution channels. Verification of authenticity and lot traceability is critical due to the discontinued status. Buyers should confirm specific revision levels and packaging formats directly with authorized suppliers before finalizing acquisition.

Memory IC Selection Notes

Engineers selecting this part must account for its obsolete lifecycle status. The 52-pin PLCC package requires compatible socket or soldering infrastructure. Verify that system voltage requirements align strictly with the 4.5V to 5.5V operating window. Consider moisture sensitivity level 3 handling procedures during assembly. Evaluate alternative components from newer product families if long-term supply stability is required for mass production.

Memory IC Part Context

The 71321SA series belongs to Renesas' high-speed dual-port SRAM portfolio. These devices are designed for applications demanding concurrent read/write operations from separate ports. The 71321SA25J8 variant specifically targets commercial grade environments. It serves as a legacy solution for systems previously utilizing IDT-compatible memory architectures.

Memory IC Replacement Considerations

Public confirmed substitute part numbers include IDT71321SA25J8.