7132LA35J

Overview

The Renesas Electronics Corporation 7132LA35J is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 8 kilobits, organized as 1K x 8 bits. The device features asynchronous parallel interfaces with a maximum access time of 35 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 52-pin Plastic Leadless Chip Carrier (PLCC) package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access by two masters
• Asynchronous operation for flexible system integration
• CMOS technology ensuring low power consumption

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data storage in industrial control applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements against specific project standards, as this variant may not meet current environmental directives. Validate package integrity upon receipt to ensure suitability for automated assembly processes.

Selection Notes

Select this component when dual-master access is required for an 8-kilobit memory space. Ensure the design accommodates the 52-PLCC footprint and 35-nanosecond timing constraints. Verify that the operating environment remains within the specified commercial temperature range and voltage limits.

Part Context

This part belongs to the 7132LA series of dual-port SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other members of the family but differs in density and pinout configurations. The LA suffix typically denotes specific packaging and speed grade variations within the broader product line.

Replacement Considerations

Public confirmed substitute part numbers: IDT7130LA35J.