7133SA35JI

Overview

The Renesas Electronics Corporation 7133SA35JI is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kilobits, organized as 2K words by 16 bits. The device utilizes an asynchronous parallel interface with a maximum access time and write cycle time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 68-pin Plastic Leadless Chip Carrier (PLCC) package.

Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on separate ports
• Asynchronous parallel interface for flexible system integration
• CMOS technology ensuring low power consumption relative to performance

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in industrial control systems
• Data storage in network infrastructure hardware

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements against project specifications, as this specific variant may not meet current environmental directives. Validate package integrity upon receipt, as PLCC components require careful handling during inspection and assembly processes.

Selection Notes

Select this component when dual-port functionality is required for concurrent master access. Ensure the design accommodates the 68-PLCC footprint and 4.5V to 5.5V power domain. Consider the 35ns timing constraints for system clock synchronization. Evaluate alternative packages if higher density or different form factors are needed.

Part Context

This part belongs to the 7133SA series of high-performance dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades and packaging options to support diverse embedded memory applications requiring independent port access.

Replacement Considerations

Officially documented substitutes include IDT7133SA35J.