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Product Detailed Parameters
- Description:IC SRAM 32KBIT PARALLEL 48DIP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Dual Port, Asynchronous
- Memory Size:32Kbit
- Memory Organization:4K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:25ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Through Hole
- Package / Case:48-DIP (0.600", 15.24mm)
- Supplier Device Package:48-PDIP
- Access Time:25 ns
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Overview
The Renesas Electronics Corporation 7134SA25P is a dual-port static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 32 kbit, organized as 4K words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 25 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 48-pin PLCC package.
Feature Summary
- Dual-port architecture enabling independent simultaneous read/write operations from two separate ports.
Applications
- High-speed data buffering in communication systems
- Cache memory implementation in embedded processors
- Data storage in industrial control equipment
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements against specific project standards, as the base model may not meet current environmental directives. Validate package integrity upon receipt to ensure pin alignment matches the 48-PLCC footprint specifications.
Selection Notes
Select this component for designs requiring independent dual-port access to shared memory resources. Ensure the system logic supports asynchronous parallel signaling compatible with the 25 ns timing characteristics. Verify that the operating temperature range aligns with the commercial grade specifications defined for this package variant.
Part Context
This part belongs to the Renesas 7134SA series of CMOS dual-port SRAMs. These devices are designed for applications requiring high-speed data transfer between two independent bus masters. The series utilizes standard CMOS technology to provide reliable memory storage with low power consumption relative to older bipolar technologies.
Replacement Considerations
IDT7134SA25P
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