7140SA35J

Overview

The Renesas Electronics Corporation 7140SA35J is an asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 8 kilobits, organized as 1K words by 8 bits. The device features a parallel interface with a maximum access time and write cycle time of 35 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 52-lead Plastic Leadless Chip Carrier (PLCC) package. The component is rated for commercial operating temperatures between 0°C and 70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on two separate ports.

Applications

• High-speed data buffering in embedded systems
• Cache memory implementation in microprocessor designs
• Real-time signal processing applications

Procurement Notes

Verify the specific suffix J indicates the tube packaging configuration, distinct from other variants like TR. Confirm RoHS compliance status, as this model may not meet current environmental directives. Check for End-of-Life notifications or Last Time Buy windows, as availability is restricted. Validate pin compatibility if replacing older IDT versions.

Selection Notes

Select this component when a compact 8Kbit dual-port SRAM solution is required for parallel bus architectures. Ensure the design accommodates the 52-PLCC footprint and 5V logic levels. Consider thermal management within the commercial temperature range. Verify that the 35ns speed meets system timing requirements.

Part Context

This part belongs to the 7140SA series of CMOS dual-port SRAMs manufactured by Renesas Electronics. It serves as a successor to legacy Integrated Device Technology (IDT) products, maintaining functional compatibility while offering modern manufacturing processes. The series is designed for applications requiring high-speed, non-volatile-like data retention during active operation.

Replacement Considerations

• 7140SA35J8