7142LA100PDG

Overview

The Renesas Electronics Corporation 7142LA100PDG is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 16 kilobits, organized as 2K words by 8 bits. The device utilizes an asynchronous parallel interface with a maximum access time of 100 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports through-hole installation in a 48-pin plastic dual in-line package.

Feature Summary

• Dual-port architecture enabling independent simultaneous read and write operations on separate ports.

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data storage in industrial control applications

Procurement Notes

Verify component authenticity due to discontinued status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate pin compatibility for existing PCB layouts before procurement. Check for authorized distributors offering remaining stock or qualified replacement alternatives.

Selection Notes

Select this component for designs requiring independent dual-port access without arbitration overhead. Ensure the system operates within the specified 4.5V to 5.5V voltage range. Verify that the 100ns access time meets the application's timing constraints. Consider the 48-DIP package dimensions for mechanical fitment.

Part Context

This SRAM belongs to the IDT 7142 family of dual-port memories. The series offers various speed grades and capacities. The 7142LA variant specifically denotes the 100ns speed bin. The manufacturer has transitioned branding from Integrated Device Technology to Renesas Electronics.

Replacement Considerations

IDT7142LA100P