7142SA35CB

Overview

The Renesas Electronics Corporation 7142SA35CB is a high-speed, 16K-bit (2K x 8) dual-port static random-access memory (SRAM). It operates on a single 5V power supply with a voltage range of 4.5V to 5.5V and features a parallel interface. The device provides a maximum access time of 35 nanoseconds. It is housed in a 48-pin ceramic dual in-line package (CDIP-SB-48) designed for surface mount or through-hole installation. The component supports asynchronous operation and includes automatic power-down capabilities controlled by chip enable signals.

Feature Summary

• True dual-port architecture enabling simultaneous independent access to the same memory location from two separate ports without external arbitration logic.
• Asynchronous parallel interface compatible with standard TTL logic levels, facilitating straightforward integration into existing digital systems.
• Automatic power-down mode that significantly reduces standby current consumption when the chip enable inputs are deactivated.

Applications

• High-speed data buffering in telecommunications equipment requiring low-latency memory access.
• Real-time control systems where simultaneous read/write operations from different processors are necessary.
• Industrial automation controllers utilizing dual-processor architectures for redundant or parallel processing tasks.

Procurement Notes

Verify the specific suffix CB indicates the 48-pin CDIP package configuration, as other suffixes may denote different form factors within the same electrical family. Confirm RoHS compliance status, as older manufacturing runs may not meet current environmental directives. Check for discontinuation notices or last-time-buy notifications, as this component belongs to an established legacy series. Ensure the supplier provides traceability documentation for ceramic packages used in critical applications.

Selection Notes

Select this component when a system requires true dual-port functionality with identical access speeds for both masters. Compare against the 7140LA35CB if only 8K capacity is needed, or the 7142SA35J if a plastic leaded chip carrier package is preferred over ceramic. Evaluate thermal requirements carefully, as ceramic packages offer superior heat dissipation compared to plastic alternatives. Verify that the 35ns speed meets the timing constraints of the host processor bus cycles.

Part Context

This part belongs to the IDT/Renesas 7142SA/LA series of dual-port SRAMs. These devices are engineered to operate as slave memories alongside master counterparts like the 7132 series, allowing expansion of word width without additional discrete logic. The series is characterized by its ability to handle full-speed error-free operations in multi-word configurations, making it a standard solution for complex memory subsystems.

Replacement Considerations

Direct replacements must match the 16Kb capacity, 35ns speed, and 48-pin CDIP package. Verify pinout compatibility before substitution. Consider upgrading to newer generation dual-port SRAMs if long-term availability is a concern, ensuring the new device maintains the required asynchronous interface and voltage specifications.