7164S55DB

Overview

The Renesas Electronics 7164S55DB is a 64K-bit (8K x 8) BICMOS static RAM. It features an asynchronous parallel interface with a maximum access time of 55 ns and a write cycle time of 55 ns. The device operates on a supply voltage range of 4.5V to 5.5V. It is housed in a 28-lead CDIP package and supports an operating temperature range from -55°C to +125°C.

Feature Summary

• BICMOS technology for high-speed operation
• Asynchronous parallel memory interface
• Wide industrial temperature range capability

Applications

• Industrial control systems
• Telecommunications equipment
• Military aerospace applications

Procurement Notes

Verify component authenticity due to obsolete status. Confirm RoHS compliance requirements as the source indicates non-compliance. Check for lead-free alternatives if environmental regulations apply. Validate package integrity upon receipt. Ensure storage conditions meet humidity sensitivity standards.

Selection Notes

Select this part for legacy designs requiring 55ns SRAM performance. Consider the 28-CDIP package constraints for PCB layout. Evaluate thermal management needs for high-temperature environments. Compare power consumption against newer CMOS alternatives. Verify voltage compatibility with existing system rails.

Part Context

This component belongs to the 7164S series of static random-access memories. It is manufactured by Renesas Electronics Corporation, formerly IDT. The device represents a standard asynchronous SRAM solution for embedded memory applications.

Replacement Considerations

Public confirmed substitute part numbers: 7164S35DB.