71T016SA12PH

Memory IC Overview

The IDT71T016SA12PH is a standard SRAM memory integrated circuit manufactured by Integrated Device Technology. It features a memory density of 1 Megabit, organized as 128K words by 8 bits. The device supports parallel data transfer with an access time of 12 nanoseconds. It utilizes CMOS technology and is housed in a 32-pin Thin Shrink Small Outline Package (TSOP II).

Memory IC Feature Summary

• Standard asynchronous SRAM architecture for general-purpose data storage.
• CMOS process technology ensuring low power consumption.
• Parallel interface configuration for direct system bus connectivity.

Memory IC Applications

• Embedded systems requiring non-volatile-like random access capabilities.
• Industrial control units utilizing standard logic interfaces.
• Consumer electronics devices employing parallel memory buses.

Memory IC Procurement Notes

Verify the specific suffix codes against official Renesas or IDT documentation to confirm package type and temperature range. Ensure compatibility with existing PCB footprints for the 32-pin TSOP II form factor. Confirm RoHS compliance status through current manufacturer notices, as legacy components may have varying environmental certifications depending on production batch.

Memory IC Selection Notes

Select this component when a 128K x 8 organization is required with 12ns speed performance. Consider the 32-pin TSOP II package constraints for board space. Evaluate alternative parts within the 71V series if voltage levels or pinouts differ from the target design specifications.

Memory IC Part Context

This part belongs to the IDT 71T/71V family of static RAMs. These devices are widely used in computing and industrial applications where fast random access memory is needed. The manufacturer has transitioned to Renesas Electronics, which continues to support these legacy memory products.

Memory IC Replacement Considerations

Direct substitutes include the IDT71V124SA12PHI. Verify pinout compatibility and electrical characteristics before substitution.