71T75802S150BG8

Overview

The Renesas Electronics Corporation 71T75802S150BG8 is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit. It provides an 18 Megabit storage capacity organized as 1M x 18 bits. The device operates with a maximum clock frequency of 150 MHz and features a typical access time of 3.8 ns. It utilizes a parallel interface and requires a supply voltage range of 2.375V to 2.625V. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm, designed for surface mount installation.

Feature Summary

• Zero Bus Turnaround architecture eliminates dead cycles between read and write operations
• Internally synchronized output buffer enable removes the need for external OE control
• Single R/W control pin simplifies interface logic requirements
• Supports four-word burst capabilities in interleaved or linear modes

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in industrial control systems
• Data storage in network infrastructure devices
• Embedded memory solutions for consumer electronics

Procurement Notes

This component has reached End-of-Life status as per Product Change Notification dated January 31, 2023. Verify current availability through authorized distributors, noting that stock may be limited or restricted. Confirm RoHS compliance status, as this specific part number is listed as non-compliant. Ensure final design decisions account for potential supply constraints due to discontinuation.

Selection Notes

Select this part when a 18Mb synchronous SRAM with ZBT technology is required for 150 MHz applications. The 119-PBGA package suits designs needing high-density surface mount options. Consider the 2.5V core voltage requirement and ensure thermal management supports the 0°C to 70°C operating temperature range. Evaluate alternative packages if different form factors are needed.

Part Context

The 71T75802 series belongs to Renesas' high-performance synchronous SRAM family, designed for applications demanding fast turnaround times. This specific model represents the 150 MHz speed grade within the 18Mb density class. It shares architectural similarities with other variants like the S166 and S200 models, differing primarily in clock speed and package type.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, direct replacements should be sourced from official Renesas channels or verified equivalents. Check datasheets for pin compatibility and electrical parameter matching before substitution.