71V256SA12PZG8

$2.60

Description：IC SRAM 256KBIT PARALLEL 28TSOP
Series：-
Mfr：IDT, Integrated Device Technology Inc
Package：Bulk

SKU:b5583b4cbb32 Category: Memory IC Brand: IDT, Integrated Device Technology Inc

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IC SRAM 256KBIT PARALLEL 28TSOP
Series：-
Mfr：IDT, Integrated Device Technology Inc
Package：Bulk
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：256Kbit
Memory Organization：32K x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：12ns
Voltage - Supply：3V ~ 3.6V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：Surface Mount
Package / Case：28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package：28-TSOP
Access Time：12 ns

Download product information

71V256SA12PZG8

Overview

The IDT71V256SA12PZG8 is a 256 Kbit (32K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It operates with a parallel interface and features a maximum access time of 12 ns. The device supports a supply voltage range from 4.5 V to 5.5 V, with a maximum power supply current of 160 mA. It is designed for surface-mount installation in a TSOP-28 package. The component functions within an operating temperature range of 0°C to +70°C and utilizes Single Data Rate (SDR) storage technology.

Feature Summary

Asynchronous operation with parallel data interface
High-speed 12 ns access time capability
Standard 5.0 V single-supply operation
Surface-mount TSOP-28 packaging

Applications

General-purpose volatile data storage
Industrial control systems
Consumer electronics devices
Embedded system memory buffers

Procurement Notes

Verify the specific suffix 'G8' against official Renesas documentation to confirm lead-free status and RoHS compliance details. Confirm that the 5.0 V specification aligns with target circuit requirements, as other variants in this series may support 3.3 V. Check current lifecycle status, as availability may be limited due to discontinuation notices found in distributor records.

Selection Notes

Select this component when a standard 5.0 V asynchronous SRAM with 12 ns speed is required. Ensure the design accommodates the 160 mA maximum current draw. Compare against 3.3 V variants like the 71V256SA20 if lower voltage operation is necessary, noting potential speed trade-offs. Verify package compatibility with the TSOP-28 footprint.

Part Context

This part belongs to the IDT/Renesas 71V256SA family of high-speed asynchronous SRAMs. These devices are widely used in legacy and industrial applications requiring reliable non-volatile-like performance without refresh cycles. The 71V256SA12 variant specifically targets 5.0 V logic systems, distinguishing it from the 3.3 V versions in the same product line.