71V30L55TF

71V30L55TF

  • Description:IC SRAM 8KBIT PARALLEL 64TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:093aecc11928 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 8KBIT PARALLEL 64TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Dual Port, Asynchronous
  • Memory Size:8Kbit
  • Memory Organization:1K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:64-LQFP
  • Supplier Device Package:64-TQFP (10x10)
  • Access Time:55 ns

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71V30L55TF

Overview

The Renesas Electronics 71V30L55TF is a high-speed, 8-kbit (1K x 8) dual-port static random-access memory (SRAM). It operates asynchronously with a maximum access time of 55 ns and supports a single 3.3 V power supply within the 3.0 V to 3.6 V range. The device features true dual-ported memory cells allowing simultaneous independent access to any memory location from either port. It includes on-chip arbitration logic and interrupt flags for port-to-port communication. The component is housed in a 64-pin Thin Quad Flat Package (TQFP) and supports surface-mount installation.

Feature Summary

  • True dual-ported architecture enabling simultaneous independent read/write access to shared memory locations
  • On-chip port arbitration logic and interrupt flags facilitating direct port-to-port communication
  • Fully asynchronous operation from either port with automatic low-power standby mode control
  • Battery backup capability supporting data retention down to 2 V

Applications

  • High-speed data buffering between asynchronous system components
  • Port-to-port communication interfaces requiring direct hardware signaling
  • Stand-alone 8-bit dual-port SRAM implementations in embedded systems
  • Applications requiring battery-backed volatile memory retention

Procurement Notes

Verify the specific suffix against official documentation, as package type and temperature grade variations exist within the series. Confirm moisture sensitivity levels and lead-free status prior to assembly. Ensure design compatibility with 3.3 V logic families. Check current production status and availability through authorized channels before finalizing procurement plans.

Selection Notes

Select this component when simultaneous independent access to shared memory is required without external arbitration circuitry. The 55 ns speed suits moderate-frequency asynchronous applications. Verify that the 64-pin TQFP package fits the board layout constraints. Consider the industrial temperature range variant if operation below 0°C is necessary, as commercial grades may differ.

Part Context

This part belongs to the 71V30 series of high-speed dual-port SRAMs manufactured by Renesas Electronics. The series provides scalable memory solutions with varying access times and temperature ranges. The 'L' designation typically indicates a 3.3 V supply voltage version with battery backup support. These devices are designed for applications needing fast, independent dual-port memory access.

Replacement Considerations

Cross-reference with IDT71V30L55TFG or IDT71V30L55TFGI8 for potential pin-compatible alternatives. Verify electrical specifications and package dimensions match exactly. Confirm that the substitute maintains the same dual-port functionality and interrupt flag capabilities.

71V30L55TF71V30L55TF

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