71V321S25TF8

Memory IC Overview

The 71V321S25TF8 is a high-speed, asynchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It provides a storage capacity of 16 kilobits organized as 2K words by 8 bits. The device features a parallel interface with an access time of 25 nanoseconds. It operates within a supply voltage range of 3.0 volts to 3.6 volts and supports surface-mount installation in a 64-pin TQFP package measuring 10x10 millimeters. The component is designed for industrial temperature ranges from 0°C to 70°C.

Memory IC Feature Summary

• Supports simultaneous independent read/write operations on two ports for concurrent processor access
• Integrates internal interrupt logic to facilitate efficient interprocessor communication
• Provides high-speed data transfer capabilities suitable for demanding real-time applications

Memory IC Applications

• Interprocessor communication systems requiring low-latency data exchange
• Network routers and switches utilizing dual-port buffering
• Industrial control systems with multiple processing units

Memory IC Procurement Notes

Verify the specific suffix TF8 confirms the 64-TQFP package and reel packaging format. Confirm RoHS compliance status as historical records indicate non-compliance for some variants in this series. Check current lifecycle status as the part may be discontinued or subject to last-time buy restrictions. Ensure the operating temperature range meets the specific environmental requirements of the target application.

Memory IC Selection Notes

Select this component when a system requires true dual-port memory architecture for concurrent data access without bus contention. The 25 ns access speed is appropriate for moderate-frequency microprocessors. Consider the 64-TQFP footprint during PCB layout planning. Evaluate power consumption limits against the 3.3V supply capability. Compare against single-port alternatives if concurrent access is not required.

Memory IC Part Context

This component belongs to the IDT/Renesas 71V321L/S family of dual-port SRAMs. These devices are engineered for high-performance embedded applications where data integrity and fast access times are critical. The family shares common architectural features but varies in speed grades and package options. The 71V321S25 variant specifically targets the 25 ns performance tier within the 3.3V operational spectrum.

Memory IC Replacement Considerations

Direct substitutes include other 71V321 series parts with compatible pinouts such as 71V321S25J or 71V321L35PFGI8, provided package and speed specifications align. Verify that any replacement maintains the dual-port architecture and interrupt logic functionality. Cross-reference datasheets to ensure electrical parameters match the original design constraints.