71V321SA25PF

Memory IC Overview

The Renesas Electronics Corporation 71V321SA25PF is a 16Kbit dual-port static random-access memory (SRAM) integrated circuit. It features a 2K x 8 memory organization with parallel interface and asynchronous operation. The device operates within a supply voltage range of 3V to 3.6V, drawing a maximum power current of 130mA. It supports a data access time of 25ns and functions reliably across an operating temperature range of 0°C to +70°C. The component is housed in a 64-TQFP surface-mount package.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access to the same memory array by two distinct controllers.

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data storage in industrial control networks

Memory IC Procurement Notes

Verify RoHS compliance status as documentation indicates non-compliance for this specific part number. Confirm moisture sensitivity level requirements during handling. Check for obsolescence notices or lifecycle changes from the manufacturer before finalizing procurement plans.

Memory IC Selection Notes

Select this component when independent read/write operations are required on shared memory resources. Ensure the design accommodates the 64-TQFP package dimensions and thermal characteristics. Verify that the system logic levels align with the specified 3V to 3.6V supply voltage range.

Memory IC Part Context

This component belongs to the 71V321 series of dual-port SRAMs manufactured by Renesas Electronics. The series provides high-speed memory solutions for applications requiring concurrent data access. The SA suffix typically denotes specific commercial temperature ranges and packaging variants within the broader product family.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer documentation for potential upgrades or cross-references.