71V3556SA150BGG8

Memory IC Overview

The 71V3556SA150BGG8 is a synchronous Single Data Rate Zero Bus Turnaround SRAM manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 Mbit organized as 128K x 36 bits. The device supports a maximum clock frequency of 150 MHz with an access time of 3.8 ns. It operates on a supply voltage range of 3.135V to 3.465V and functions within a commercial temperature range of 0°C to 70°C. The component utilizes a parallel interface and is housed in a 119-PBGA package measuring 14x22 mm.

Memory IC Feature Summary

• Synchronous SDR ZBT architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Pipelined output structure provides high-speed data throughput for demanding applications.
• Integrated burst counter manages sequential memory access operations efficiently.

Memory IC Applications

• High-performance networking equipment requiring fast packet buffering
• Telecommunications infrastructure systems
• Industrial control systems with strict timing requirements

Memory IC Procurement Notes

Verify the specific suffix BGG8 against official Renesas documentation to confirm package type and pinout compatibility. Confirm RoHS status, as this series may not meet current environmental standards. Check for End-of-Life notices, as availability is limited. Ensure the supplier provides valid traceability for this discontinued component.

Memory IC Selection Notes

Select this part when a 128K x 36 organization is required for wide data paths. Choose the SA variant for 150 MHz performance over slower speed grades. Consider the PBGA package for surface-mount assembly constraints. Verify that the 3.3V I/O levels match the system logic requirements.

Memory IC Part Context

This component belongs to the 71V3556 family of synchronous SRAMs. It shares architectural similarities with other variants like the 71V3556SA100 and 71V3556SA166, differing primarily in speed grade and packaging. The family is designed for high-throughput parallel memory applications.

Memory IC Replacement Considerations

Official substitutes include the 71V3556SA100BGG8 for lower speed requirements and the 71V3556SA166BGG8 for higher frequency needs. Cross-reference pinouts and electrical characteristics before substitution.