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71V3559S80BQI
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Product Detailed Parameters
- Description：IC SRAM 4.5MBIT PAR 165CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, SDR (ZBT)
- Memory Size：4.5Mbit
- Memory Organization：256K x 18
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：3.135V ~ 3.465V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：165-TBGA
- Supplier Device Package：165-CABGA (13x15)
- Access Time：8 ns
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Overview
The Renesas Electronics Corporation 71V3559S80BQI is a synchronous single-data-rate zero-burst static random-access memory (SRAM) IC. It features a storage capacity of 4.5 Mbit organized as 256K x 18 bits. The device supports parallel interface operations with an access time of 8 ns and operates within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 165-CABGA package measuring 13x15 mm, designed for surface mount installation.
Feature Summary
- Supports synchronous single-data-rate parallel data transfer
- Provides high-speed burst mode operation for efficient data streaming
- Includes global write control and byte write enable capabilities
Applications
- High-performance embedded systems requiring fast data buffering
- Industrial equipment control units
- Network infrastructure hardware
Procurement Notes
Verify the exact suffix against official Renesas documentation to confirm pinout compatibility and temperature grade. Confirm RoHS compliance status as manufacturing processes evolve. Check for active obsolescence notices or last-time-buy notifications before finalizing procurement plans.
Selection Notes
Select this component when a 256K x 18 organization is required for synchronous memory applications. Ensure the design accommodates the specific 3.3V core voltage requirements and the physical dimensions of the 165-CABGA package. Validate thermal management strategies for the intended operating temperature range.
Part Context
This part belongs to the IDT 71V3559 family of synchronous SRAMs, now manufactured under the Renesas Electronics brand following corporate acquisitions. The series is characterized by its zero-burst architecture, which maintains constant throughput regardless of address patterns, making it suitable for pipeline-based system designs.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Consider variants such as the 71V3559S80BG8 for different packaging options, ensuring functional equivalence in speed and organization.
